| PART |
Description |
Maker |
| APT20M20JFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
POWER MOS 7 200V 106A 0.020 Ohm
|
Advanced Power Technology Ltd.
|
| SAB-R2010A |
MOSFET N-CH 200V 106A SOT-227B
|
SIEMENS AG
|
| APT20M45BVR |
POWER MOS V 200V 56A 0.045 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT20M26WVR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 65A 0.026 Ohm
|
Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M18LVFR APT20M18B2VFR |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
IC,Normally-Open Panel-Mount Solid-State Relay,1-CHANNEL,M:HL066HD4.3 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M18LVR APT20M18B2VR |
ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- UL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.018 Ohm
|
Advanced Power Technology, Ltd.
ADPOW[Advanced Power Technology]
|
| APT20M22LVR APT20M22LVRG |
Power MOSFET; Package: TO-264 [L]; ID (A): 100; RDS(on) (Ohms): 0.022; BVDSS (V): 200; 100 A, 200 V, 0.022 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 100A 0.022 Ohm
|
Microsemi, Corp.
ADPOW[Advanced Power Technology]
|
| IRC640 |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
|
IRF[International Rectifier]
|
| IRFD210 |
200V Single N-Channel HEXFET Power MOSFET in a HEXDIP package
Power MOSFET(Vdss=200V, Rds(on)=1.5ohm, Id=0.60A)
|
International Rectifier
|
| IRFI640G |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=9.8A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=9.8A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）\u003d 0.18ohm，身份证\u003d 9.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| H5N2005DL-15 |
200V - 6A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
